论文信息 - Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes - 字舞流文

Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

K. Kalna | M. Aldegunde | D. Nagy | A. García-Loureiro | N. Seoane | G. Indalecio | M. Elmessary