Dynamic Gate Stress-Induced $V_{\text {TH}}$ Shift and Its Impact on Dynamic $R_{\mathrm {ON}}$ in GaN MIS-HEMTs

Very fast transients of VTH shift and their impact on RON under dynamic AC (1 k-1 MHz) positive gate stress in depletion-mode (D-mode) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) are revealed. We achieve data acquisition within 120 ns right after each stress pulse throughout the entire stress time range from 10-7 up to 103 s, by virtue of a short stress-to-sense delay of ~100 ns and high sampling rate up to 50 MSa/s. Despite the considerable VTH shift, its impact on RON in D-mode MIS-HEMT is modest, if the device is under sufficient gate overdrive. Furthermore, VTH shift and the consequent RON increase under dynamic stress, which are more relevant to high-frequency switching operation, exhibits frequency dependence within 1 k-1 MHz and is always smaller than that under conventionally used static (constant) stress.

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