Dynamic Gate Stress-Induced $V_{\text {TH}}$ Shift and Its Impact on Dynamic $R_{\mathrm {ON}}$ in GaN MIS-HEMTs
暂无分享,去创建一个
Shu Yang | Cheng Liu | Kevin J. Chen | Shu Yang | Hanxing Wang | Sheng-gen Liu | Yunyou Lu | Yunyou Lu | Shenghou Liu | Hanxing Wang | K. J. Chen | Cheng Liu
[1] Shu Yang,et al. AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs , 2015, IEEE Transactions on Electron Devices.
[2] A. S. Oates,et al. Threshold voltage drift (PBTI) in GaN D-MODE MISHEMTs: Characterization of fast trapping components , 2014, 2014 IEEE International Reliability Physics Symposium.
[3] M. Rosmeulen,et al. Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..
[4] A. Kerber,et al. PBTI under dynamic stress: From a single defect point of view , 2011, 2011 International Reliability Physics Symposium.
[5] G. Pobegen,et al. Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs , 2012, 2012 International Electron Devices Meeting.
[6] U. Mishra,et al. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs , 2001 .
[7] Rongming Chu,et al. Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C , 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.
[8] Ming-Fu Li,et al. Understand NBTI Mechanism by Developing Novel Measurement Techniques , 2008, IEEE Transactions on Device and Materials Reliability.
[9] D. Pogany,et al. Enhancement of Vth drift for repetitive gate stress pulses due to charge feedback effect in GaN MIS-HEMTs , 2014, 2014 IEEE International Reliability Physics Symposium.
[10] Sen Huang,et al. Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices , 2012, IEEE Electron Device Letters.
[11] S. Decoutere,et al. Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).
[12] D. Ueda,et al. GaN on Si Technologies for Power Switching Devices , 2013, IEEE Transactions on Electron Devices.
[13] Jungwoo Joh,et al. A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors , 2011, IEEE Transactions on Electron Devices.
[14] Gaudenzio Meneghesso,et al. Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage , 2015, IEEE Transactions on Electron Devices.
[15] Shu Yang,et al. Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer , 2015 .
[16] S. Natarajan,et al. Impact of negative bias temperature instability on digital circuit reliability , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
[17] D. Pogany,et al. Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments , 2014, IEEE Transactions on Electron Devices.
[18] T. Grasser,et al. Understanding and modeling AC BTI , 2011, 2011 International Reliability Physics Symposium.
[19] V. Misra,et al. Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices , 2015, IEEE Transactions on Electron Devices.
[20] P. Gassot,et al. An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[21] Shu Yang,et al. High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation , 2013, IEEE Electron Device Letters.
[22] C. Pacha,et al. Highly accurate product-level aging monitoring in 40nm CMOS , 2010, 2010 Symposium on VLSI Technology.
[23] G. Pobegen,et al. Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs , 2013, IEEE Electron Device Letters.
[24] Alex Guo,et al. Positive-bias temperature instability (PBTI) of GaN MOSFETs , 2015, 2015 IEEE International Reliability Physics Symposium.