10-bit 30-MS/s SAR ADC Using a Switchback Switching Method

This brief presents a 10-bit 30-MS/s successive-approximation-register analog-to-digital converter (ADC) that uses a power efficient switchback switching method. With respect to the monotonic switching method, the input common-mode voltage variation reduces which improves the dynamic offset and the parasitic capacitance variation of the comparator. The proposed switchback switching method does not consume any power at the first digital-to-analog converter switching, which can reduce the power consumption and design effort of the reference buffer. The prototype was fabricated in a 90-nm 1P9M CMOS technology. At 1-V supply and 30 MS/s, the ADC achieves an sequenced neighbor double reservation of 56.89 dB and consumes 0.98 mW, resulting in a figure-of-merit (FOM) of 57 fJ/conversion-step. The ADC core occupies an active area of only 190 × 525 μm2.

[1]  Franco Maloberti,et al.  A 10-bit 100-MS/s Reference-Free SAR ADC in 90 nm CMOS , 2010, IEEE Journal of Solid-State Circuits.

[2]  Robert W. Brodersen,et al.  A 6-bit 600-MS/s 5.3-mW asynchronous ADC in 0.13-μm CMOS , 2006 .

[3]  Soon-Jyh Chang,et al.  A 10-bit 50-MS/s SAR ADC With a Monotonic Capacitor Switching Procedure , 2010, IEEE Journal of Solid-State Circuits.

[4]  David C. Lee,et al.  Analysis of jitter in phase-locked loops , 2002 .

[5]  Sanroku Tsukamoto,et al.  A 10b 50MS/s 820µW SAR ADC with on-chip digital calibration , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[6]  Jordi Suñé,et al.  Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability , 2005, Microelectron. Reliab..

[7]  Young-Kyun Cho,et al.  A 9-bit 80 MS/s Successive Approximation Register Analog-to-Digital Converter With a Capacitor Reduction Technique , 2010, IEEE Transactions on Circuits and Systems II: Express Briefs.

[8]  Yu Cao,et al.  Modeling and minimization of PMOS NBTI effect for robust nanometer design , 2006, 2006 43rd ACM/IEEE Design Automation Conference.

[9]  M. Denais,et al.  NBTI degradation: From physical mechanisms to modelling , 2006, Microelectron. Reliab..

[10]  P. R. Gray,et al.  A 1.5-V, 10-bit, 14.3-MS/s CMOS pipeline analog-to-digital converter , 1999, IEEE J. Solid State Circuits.

[11]  Yu Cao,et al.  Predictive Modeling of the NBTI Effect for Reliable Design , 2006, IEEE Custom Integrated Circuits Conference 2006.

[12]  Chorng-Kuang Wang,et al.  A 10-bit 500-KS/s low power SAR ADC with splitting comparator for bio-medical applications , 2009, 2009 IEEE Asian Solid-State Circuits Conference.

[13]  Nam Sung Kim,et al.  Analyzing and minimizing effects of temperature variation and NBTI on active leakage power of power-gated circuits , 2010, 2010 11th International Symposium on Quality Electronic Design (ISQED).

[14]  Jordi Suñé,et al.  Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides , 2002 .

[15]  Jordi Suñé,et al.  On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress conditions , 2002 .

[16]  Soon-Jyh Chang,et al.  A 10-bit 12-MS/s successive approximation ADC with 1.2-pF input capacitance , 2009, 2009 IEEE Asian Solid-State Circuits Conference.

[17]  J. Stathis Percolation models for gate oxide breakdown , 1999 .

[18]  C.H. Kim,et al.  Silicon Odometer: An On-Chip Reliability Monitor for Measuring Frequency Degradation of Digital Circuits , 2007, 2007 IEEE Symposium on VLSI Circuits.

[19]  Andrea Baschirotto,et al.  An 820μW 9b 40MS/s Noise-Tolerant Dynamic-SAR ADC in 90nm Digital CMOS , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[20]  Sanroku Tsukamoto,et al.  A 10-b 50-MS/s 820- $\mu $W SAR ADC With On-Chip Digital Calibration , 2010, IEEE Transactions on Biomedical Circuits and Systems.