Demonstration of a Millimeter-wave High-Power Transceiver Module using AlN Interposer

This paper presents a GaN-based transceiver module featuring a maximum equivalent isotropically radiated power (EIRP) of 30.3 dBm at 38 GHz. With the adoption of AlN substrate as interposer, an effective management of the heat generated during high power operation mode was achieved. Experimental verification with a 24-hour over-the-air (OTA) test was performed while driving the transceiver at its maximum EIRP. Such verification has demonstrated the great potential of adopting the developed AlN substrate technology as interposer for high-power transceivers at millimeter-wave frequencies.