Femtosecond intersubband dynamics of electrons in AlGaN/GaN-based high-electron-mobility transistors
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L. Eastman | W. Schaff | T. Elsaesser | K. Reimann | D. Hofstetter | J. Hwang | M. Woerner | Zhongyang Wang
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L. Eastman | W. Schaff | T. Elsaesser | K. Reimann | D. Hofstetter | J. Hwang | M. Woerner | Zhongyang Wang