A monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier

We report on a 1-6 GHz HEMT-HBT three-stage variable gain amplifier (VGA), which is realized using selective molecular beam epitaxy (MBE). The VGA integrates an HEMT low noise amplifier with an HBT analog current-steer variable gain cell and output driver stage to achieve a combination of low noise figure, wide gain control, and high linearity. The HEMT-HBT VGA MMIC obtains a maximum gain of 21 dB with a gain control range >30 dB, a minimum noise figure of 4.3 dB, and an input IP3 (IIP3) greater than -4 dBm over 25 dB of gain central range. By integrating an HEMT instead of on HBT preamplifier stage, the VGA noise figure is improved by as much as 2 dB compared to an all-HBT single-technology design. The HEMT-HBT MMIC demonstrates the functional utility and RF performance advantage of monolithically integrating both HEMT and HBT devices on a single substrate.

[1]  Barry R. Allen,et al.  High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHz , 1990, IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits.

[2]  I. Kipnis,et al.  Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz , 1989, Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[3]  Masahiro Muraguchi,et al.  A linear limiter: a 11-GHz monolithic low distortion variable gain amplifier , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[4]  T. Yoshimasu,et al.  Miniaturized low noise variable MMIC amplifiers with low power consumption for L-band portable communication applications , 1993, IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.

[5]  Kevin W. Kobayashi,et al.  Monolithic HEMT-HBT integration for novel microwave circuit applications , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

[6]  Kevin W. Kobayashi,et al.  Monolithic GaAs HBT p-i-n diode variable gain amplifiers, attenuators, and switches , 1993 .

[7]  D.C. Streit,et al.  A novel baseband-1.5 GHz monolithic HBT variable gain amplifier with PIN diode gain control , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[8]  C.C. Yang,et al.  12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

[9]  Kevin W. Kobayashi,et al.  Monolithic HEMT-HBT integration by selective MBE , 1995 .

[10]  J. Akagi,et al.  AlGaAs/GaAs HBT receiver ICs for a 10 Gbps optical communication system , 1990, 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).

[11]  Kevin W. Kobayashi,et al.  HBT low power consumption 2-4.5 GHz variable gain feedback amplifier , 1992, GaAs IC Symposium Technical Digest 1992.

[12]  J. Wenger,et al.  Low-noise pseudomorphic dual-gate cascode HEMTs with extremely high gain , 1992, IEEE Microwave and Guided Wave Letters.

[13]  Kevin W. Kobayashi,et al.  GaAs HBT 0.75-5 GHz multifunctional microwave-analog variable gain amplifier , 1993 .

[14]  K.W. Kobayashi,et al.  A monolithic HBT-regulated HEMT LNA by selective MBE , 1995, IEEE Microwave and Guided Wave Letters.

[15]  Kevin W. Kobayashi,et al.  A novel monolithic LNA integrating a common-source HEMT with an HBT Darlington amplifier , 1995 .

[16]  Masahiro Muraguchi,et al.  A novel MMIC power amplifier for pocket-size cellular telephones , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.

[17]  Kevin W. Kobayashi,et al.  A novel monolithic HBT-p-i-n-HEMT integrated circuit with HBT active feedback and p-i-n diode variable gain control , 1995 .

[18]  Robert G. Meyer,et al.  A DC to 1-GHz differential monolithic variable-gain amplifier , 1991 .