论文信息 - Temperature Dependence of the Piezoresistance Effects of p-Type Silicon Diffused Layers - 字舞流文

Temperature Dependence of the Piezoresistance Effects of p-Type Silicon Diffused Layers

Etude experimentale. Phenomenes non lineaires. Simulation des caracteristiques de deplacement des capteurs utilisant l'effet piezoresistif

Satoshi Shimada | Michitaka Shimazoe | Masanori Tanabe | Yamada Kazuji | Nishihara Motohisa

[1] J. Irvin,et al. Resistivity of bulk silicon and of diffused layers in silicon , 1962 .

[2] O. N. Tufte,et al. Piezoresistive Properties of Silicon Diffused Layers , 1963 .

[3] J. Wortman,et al. Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and Germanium , 1965 .

[4] M. Nishihara,et al. Nonlinearity of the piezoresistance effect of p-type silicon diffused layers , 1982, IEEE Transactions on Electron Devices.

[5] G. E. Pikus,et al. Symmetry and strain-induced effects in semiconductors , 1974 .

[6] Charles S. Smith. Piezoresistance Effect in Germanium and Silicon , 1954 .

[7] C. Herring,et al. Temperature Dependence of the Piezoresistance of High-Purity Silicon and Germanium , 1957 .

[8] A. G. Milnes,et al. Piezoresistance of Diffused Layers in Cubic Semiconductors , 1963 .

[9] Donald Long. Stress Dependence of the Piezoresistance Effect , 1961 .

[10] L. Bruce Wilner. A diffused silicon pressure transducer with stress concentrated at transverse gages , 1977 .

[11] R. N. Thurston,et al. Erratum: Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects , 1961 .