High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors

This work presents the high-temperature DC and RFbehaviorsofpartially-depletedSOI MOSFETs. DC and RF figures of merit are deeply investigated, both analytically and experimentally, to provide a complete study ofhigh-temperature performance and a comparison between floating-body and body-tied transistors. A highly stable RF performance is noticed especially for cutoff frequency and intrinsic elements for temperature as high as 250° C.

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