Au-Sn Transient Liquid Phase bonding for hermetic sealing and getter activation

Results on a promising high temperature bonding process, Au-Sn Transient Liquid Phase bonding, based on interdiffusion in the Au-Sn system, are presented. The bonds formed with this method offer the same excellent properties as Au-Sn (80% wt. Au/20% wt. Sn) eutectic solder like fluxless bonding, oxidation resistance and excellent mechanical strength, while providing solid joints at a temperature well above the first melting temperature of 278°C. Si-caps with thick Au/ eutectic preform or Au/Sn electroplated rings were bonded to standard ceramic packages. The sealed packages were found hermetic (high resolution helium leak-tester). SEM/EDS analysis of the cross-sections showed uniform bonds consisting of Au and an Au-rich phase identified as the ξ'/ξ-phase, with a melting point up to 519°C. The joint, which originally melted at 278°C, will therefore remain solid during getter activation. The sealed packages were then submitted to annealing treatments up to 380°C for 30 min, corresponding to the temperature and duration of a possible getter activation. No major change of the interface was detected with further cross-sections. In a second step, vacuum sensors and getter parts were sealed in the packages with the same bonding process. The subsequent getter activation led to an improvement of the vacuum level by more than a factor of 10.

[1]  Antonia Neels,et al.  Au-Sn SLID Bonding: A Reliable HT Interconnect and Die Attach Technology , 2013, Metallurgical and Materials Transactions B.

[2]  K. Aasmundtveit,et al.  Au-Sn fluxless SLID bonding: Effect of bonding temperature for stability at high temperature, above 400 °C , 2010, 3rd Electronics System Integration Technology Conference ESTC.

[3]  K. Aasmundtveit,et al.  Au–sn SLID bonding: Fluxless bonding with high temperature stability to above 350 °c , 2009, 2009 European Microelectronics and Packaging Conference.

[4]  Stephane Bernabe,et al.  A fluxless bonding process using AuSn or Indium for a miniaturized hermetic package , 2009, 2009 59th Electronic Components and Technology Conference.

[5]  S. Jung,et al.  Liquid-state and solid-state interfacial reactions of fluxless-bonded Au–20Sn/ENIG solder joint , 2009 .

[6]  Qi Liu,et al.  Fabrication and microstructures of sequentially electroplated Au-rich, eutectic Au/Sn alloy solder , 2008 .

[7]  S. Jung,et al.  Investigation of interfacial reaction between Au-Sn solder and Kovar for hermetic sealing application , 2007 .

[8]  H. Reichl,et al.  Precise flip chip assembly using electroplated AuSn20 and SnAg3.5 solder , 2006, 56th Electronic Components and Technology Conference 2006.

[9]  A. Kjekshus,et al.  The Ternary System Au–Ni–Sn , 1996 .

[10]  D. S. Duvall,et al.  TLP bonding: a new method for joining heat resistant alloys , 1974 .

[11]  罗乐,et al.  Wafer level hermetic packaging based on Cu-Sn isothermal solidification technology , 2009 .

[12]  H. Reichl,et al.  Development of an assembly process and reliability investigations for flip-chip LEDs using the AuSn soldering , 2002 .