论文信息 - Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments - 字舞流文

Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments

M. López-López | J. Rojas-Ramírez | L. Zamora-Peredo | S. Gallardo-Hernández | R. Contreras-Guerrero | Y. Kudriatsev | E. Cruz-Hernández | Á. Pulzara-Mora | V. Méndez-García | Z. Rivera-Alvarez | V. Sanchez-Resendiz | A. Guillén-Cervantes

[1] M. López-López,et al. Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy , 2007 .

[2] F. Pollak. Study of semiconductor surfaces and interfaces using electromodulation , 2001 .

[3] M. Johnson,et al. Large scale surface structure formed during GaAs (001) homoepitaxy , 1994 .

[4] K. Tone,et al. Interaction of atomic hydrogen with GaAs (001) surface oxide: volatile Ga-oxide formation , 1993 .

[5] D. Bimberg,et al. Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques , 1991 .

[6] T. Sugaya,et al. Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation , 1991 .

[7] R. Nötzel,et al. Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates , 2005 .