论文信息 - Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer - 字舞流文

Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer

T. Wen | J. Sheu | W. Lai | Y. Su | G. Chi | J. Tsai | S. Shei | C. Kou | S. Chang | J. Tsai | Shoou-Jinn Chang | Yan-Kuin Su | G. Chi | Wei-Chih Lai | C. H. Kou