论文信息 - Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures - 字舞流文

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

M. Meneghini | G. Meneghesso | M. Germain | F. Medjdoub | J. Derluyn | A. Tajalli | S. Degroote | I. Abid | R. Kabouche | R. Püsche