Tunnelling- and barrier-injection transit-time mechanisms of terahertz plasma instability in high-electron mobility transistors

We study theoretically the plasma instability in a heterostructure similar to a high-electron mobility transistor. The instability under consideration is associated with the transit-time effects of the electrons injected from the channel into the gate layer due to tunnelling or thermionic emission. The frequencies of the self-excited plasma oscillations, which fall within the terahertz range, are determined by the electron concentration in the channel and its length. We find the instability criteria expressed via the structural parameters and applied voltage.

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