A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50/spl Omega/ output
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[1] M. Nagata,et al. A 3.6 V 4 W 0.2cc Si power-MOS-amplifier module for GSM handset phones , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).
[2] H. Knapp,et al. Lumped and distributed lattice-type LC-baluns , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
[3] Arpad L. Scholtz,et al. Modeling of monolithic lumped planar transformers up to 20 GHz , 2001, Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169).
[4] R. A. Hadaway,et al. Monolithic transformers for silicon RF IC design , 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).
[5] Ali Hajimiri,et al. A 2.4-GHz, 2.2-W, 2-V fully-integrated CMOS circular-geometry active-transformer power amplifier , 2001, Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169).
[6] Arpad L. Scholtz,et al. 5-6.5 GHz LTCC power amplifier module with 0.3 W at 2.4 V in Si-bipolar , 2003 .
[7] R. Mongia. RF and microwave coupled-line circuits , 1999 .
[8] Peter Vizmuller,et al. RF Design Guide Systems, Circuits and Equations , 1995 .
[9] Rudolf Lachner,et al. SiGe-HBTs for Bipolar and BICMOS-Applications: From Research to Ramp up of Production , 2001 .
[10] G. Funk,et al. Low temperature cofired ceramic: an enabler of high power RF integrated amplifiers , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
[11] Werner Simburger,et al. A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz , 1999 .