Submillimeter laser cyclotron resonance of inversion layers at low electron densities

[1]  S. J. Allen,et al.  Evidence for a Collective Ground State in Si Inversion Layers in the Extreme Quantum Limit , 1980 .

[2]  D. Tsui,et al.  Submillimeter cyclotron resonance studies of inversion layers at low electron density , 1979 .

[3]  H. Fukuyama,et al.  Pinning and conductivity of two-dimensional charge-density waves in magnetic fields , 1978 .

[4]  C. T. White,et al.  Critical comparisons between experiment and the predictions of the random pair attractive interaction model of carrier correlation in Si inversion layers , 1978 .

[5]  P. M. Platzman,et al.  The two-dimensional electron gas in a strong magnetic field , 1978 .

[6]  J. Wakabayashi,et al.  Electron localization in silicon inversion layers under strong magnetic fields , 1978 .

[7]  R. J. Wagner,et al.  Far infrared resonant magnetoabsorption in low density Si inversion layers , 1977 .

[8]  J. Wakabayashi,et al.  Temperature dependence of the magnetoconductivity in the ground Landau level in silicon inversion layers , 1977 .

[9]  M. Tsukada Two-Dimensional Crystallization of the Electrons in MOS Structures Induced by Strong Magnetic Field , 1977 .

[10]  R. J. Smith,et al.  New experimental band width for Ni , 1977 .

[11]  D. Tsui High field magnetoconductivity of Si inversion layers , 1977 .

[12]  R. J. Wagner,et al.  Lineshape distortions in fir cyclotron resonance of MOS structures , 1976 .

[13]  M. Ortenberg Substrate effects on the cyclotron resonance in surface layers of silicon , 1975 .

[14]  H. Mikeska,et al.  Cyclotron resonance of electrons in localized surface states , 1975 .

[15]  G. Abstreiter,et al.  Cyclotron Resonance of Localized Electrons on a Si Surface , 1975 .