Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer layer while in the previous work the hole etching depth was only down to top of the upper spacer. In this way, the threshold current decrement of 76.52% and increment the power by 28% from 5mW to 6.4mW at bias current of 9mA was achieved. In this paper, device characteristics such as light power versus electrical current and voltage versus current are simulated and compared with the previous work.

[1]  Scott W. Corzine,et al.  High temperature continuous-wave operation of 1.3- and 1.55-/spl mu/m VCSELs with InP/air-gap DBRs , 2003 .

[2]  Joachim Piprek,et al.  Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation , 2003 .

[3]  John E. Bowers,et al.  1.55-/spl mu/m vertical-cavity laser arrays for wavelength-division multiplexing , 2001 .

[4]  C. Chang-Hasnain,et al.  High-performance 1.6 µm single-epitaxy top-emitting VCSEL , 2000, CLEO 2000.

[5]  Joachim Piprek,et al.  Design and optimization of high-performance 1.3-μm VCSELs , 2004, SPIE OPTO.

[6]  Hans Wenzel,et al.  The effective frequency method in the analysis of vertical-cavity surface-emitting lasers , 1997 .

[7]  John E. Bowers,et al.  Wafer bonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105 °C , 2001 .

[8]  John E. Bowers,et al.  Design and analysis of double-fused 1.55-/spl mu/m vertical-cavity lasers , 1997 .

[9]  B.Y. Majlis,et al.  Design and modeling of a vertical-cavity surface-emitting laser (VCSEL) , 2008, 2008 IEEE International Conference on Semiconductor Electronics.

[10]  Larry A. Coldren,et al.  1.55-/spl mu/m InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs , 2001 .

[11]  R. Iga,et al.  Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers , 2002, IEEE Photonics Technology Letters.

[12]  J.-H. Lee,et al.  CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD , 2002, IEEE Photonics Technology Letters.

[13]  K. Iga,et al.  Surface-emitting laser-its birth and generation of new optoelectronics field , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[14]  Vectorial analysis of dielectric photonic crystal VCSEL , 2009, 2009 11th International Conference on Transparent Optical Networks.

[15]  G. R. Hadley,et al.  Effective index model for vertical-cavity surface-emitting lasers. , 1995, Optics letters.

[16]  Catherine Caneau,et al.  High efficiency long wavelength VCSEL on InP grown by MOCVD , 2003 .

[17]  Markus Ortsiefer,et al.  Vertical-cavity surface-emitting laser diodes at 1.55 /spl mu/m with large output power and high operation temperature , 2001 .