论文信息 - Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching

Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching

Narrow, high‐aspect‐ratio grooves formed by reactive ion etching (RIE) are shown to be useful as partially transmissive mirrors for coupled active laser‐detector, laser‐modulator, and laser‐etalon two‐section monolithic devices. Results emphasize control of the longitudinal mode spectrum by active etalon action.

Kenichi Iga | Larry A. Coldren | Barry Miller | J. A. Rentschler

[1] R. E. Nahory,et al. Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver , 1980 .

[2] P. W. Smith,et al. Mode selection in lasers , 1972 .

[3] G. Lasher,et al. Analysis of a proposed bistable injection laser , 1964 .

[4] Kenichi Iga,et al. GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet , 1980 .

[5] T. Miya,et al. Ultimate low-loss single-mode fibre at 1.55 μm , 1979 .

[6] Kenichi Iga,et al. GaInAsP/InP laser with monolithically integrated monitoring detector , 1980 .

[7] Katsuyuki Utaka,et al. GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm Wavelength , 1980 .