论文信息 - Laser‐induced vapor deposition of silicon

Laser‐induced vapor deposition of silicon

Silicon films were deposited when silane was irradiated with a pulsed CO2 laser. This laser‐induced vapor deposition occurs effectively when the laser is tuned to an absorption frequency of SiH4. Efficiency was so high that an unfocused beam of 1.3 MW/cm2 sufficed. Any thermal effects are ruled out. Deposition is induced efficiently at gas pressures above 100 Torr, indicating that a collision‐aided process is involved.

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