论文信息 - Comments on "Design issues in CMOS differential LC oscillators" [and reply]

Comments on "Design issues in CMOS differential LC oscillators" [and reply]

For the original paper see ibid., vol. 34, no. 5, p. 717-24 (1999). The commenter points out that the phase noise difference reported in the aforementioned paper appears to have a topological cause, and he presents a simple analysis to show that the difference is 6 dB under otherwise identical conditions. In reply, the authors clarify some points in their original work.

T.H. Lee | A. Hajimiri | HongMo Wang

[1] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .

[2] Y. Nemirovsky,et al. 1/ f noise reduction of metal‐oxide‐semiconductor transistors by cycling from inversion to accumulation , 1991 .

[3] A. Hajimiri,et al. Design issues in CMOS differential LC oscillators , 1999, IEEE J. Solid State Circuits.

[4] E. Klumperink,et al. Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators , 1999, IEEE J. Solid State Circuits.

[5] Ali Hajimiri,et al. A general theory of phase noise in electrical oscillators , 1998 .

[6] A.J.M. van Tuijl,et al. Reduction of the 1/f noise induced phase noise in a CMOS ring oscillator by increasing the amplitude of oscillation , 1998, ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187).