Temperature dependence of the fast, near-band-edge scintillation from CuI, HgI2, PbI2, ZnO:Ga and CdS:In
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[1] W. Lehmann. Optical Absorption Edges of ZnO and CdS , 1965 .
[2] W. Lehmann,et al. Edge emission of n-type conducting ZnO and CdS , 1966 .
[3] F. Raga,et al. Exciton luminescence in lead iodide lifetime, intensity and spectral position dependence on temperature , 1969 .
[4] Miss A.O. Penney. (b) , 1974, The New Yale Book of Quotations.
[5] S. Yamazaki,et al. Stokes and Anti-Stokes D-A Pair Luminescences in PbI2 , 1982 .
[6] W. F. Schnepple,et al. Low temperature photoluminescence of detector-grade HgI2☆ , 1983 .
[7] I. Broser,et al. Nonlinear Luminescence of Heavily Doped CdS: In Crystals , 1990 .
[8] V. A. Bibik,et al. Donor-Acceptor Emission in PbI2 Crystals , 1991 .
[9] R. Heitz,et al. Recombination kinetics of CdS: In , 1992 .
[10] P. Dorenbos,et al. Detection of CdS(Te) and ZnSe(Te) scintillation light with silicon photodiodes , 1992 .
[11] William W. Moses,et al. Characterization of a pulsed X-ray source for fluorescent lifetime measurements , 1993 .
[12] P. Y. Yu,et al. Fundamentals of Semiconductors , 1995 .
[13] Hadis Morkoç,et al. Mechanisms of band‐edge emission in Mg‐doped p‐type GaN , 1996 .
[14] R. Anderson. Decay dynamics of free and trapped excitons in tetragonal mercuric iodide , 1996 .
[15] B. Novikov,et al. Luminescence of mercuric iodide crystals , 1997 .
[16] D. Mcgregor,et al. Room-temperature compound semiconductor radiation detectors , 1997 .
[17] W. Moses,et al. Measurements of the intrinsic rise times of common inorganic scintillators , 1999 .
[18] Pierre Gibart,et al. TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN , 1999 .
[19] N. Starzhinskiy,et al. New semiconductor scintillators ZnSe(Te,O) and integrated radiation detectors based thereon , 2001 .