Wide-temperature-range characterization of 1.55-μm phosphorus-free multiple-quantum-well lasers grown by MBE on InP

Phosphorus-free multiple-quantum-well lasers with In0.53Ga0.47As wells, In0.53Al0.2Ga0.27As barriers, and In0.53Al0.47As claddings have been fabricated as Fabry-Perot devices of different lengths and widths. Their current-voltage and light-current characteristics have been measured over a wide temperature range from 200 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.