Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variation

We present the vanadium dioxide (VO2) thin films deposition using e-beam evaporation of a vanadium target under oxygen atmosphere on different substrates (sapphire, Si, SiO2/Si…) and we focus on their electrical and optical properties variations as the material undergoes a metal-insulator transition under thermal and electrical stimuli. The phase transition induces extremely abrupt changes in the electronic and optical properties of the material: the electrical resistivity increases up to 5 orders of magnitude while the optical properties (transmission, reflection, refractive index) are drastically modified. We present the integration of these films in simple planar optical devices and we demonstrate electrical-activated optical modulators for visible-infrared signals with high discrimination between the two states. We will highlight a peculiar behavior of the VO2 material in the infrared and far infrared regions (2- 20 μm), namely its anomalous emissivity change under thermal- end electrical activation (negative differential emittance phenomenon) with potential applications in active coatings for thermal regulation, optical limiting or camouflage coatings.

[1]  Shriram Ramanathan,et al.  Structure-functional property relationships in rf-sputtered vanadium dioxide thin films , 2007 .

[2]  Xin Zhang,et al.  Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial , 2012, Nature.

[3]  C. N. Berglund,et al.  Electronic Properties of V O 2 near the Semiconductor-Metal Transition , 1969 .

[4]  O. Durand,et al.  Structural, electrical and optical properties of pulsed laser deposited VO2 thin films on R- and C-sapphire planes , 2004 .

[5]  Federico Capasso,et al.  Ultra-thin perfect absorber employing a tunable phase change material , 2012 .

[6]  A. Crunteanu,et al.  High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes , 2012 .

[7]  R. Mark Wilson,et al.  Metal–insulator transition in vanadium dioxide , 2009 .

[8]  Allen,et al.  VO2: Peierls or Mott-Hubbard? A view from band theory. , 1994, Physical review letters.

[9]  F. J. Morin,et al.  Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature , 1959 .

[10]  S. Ramanathan,et al.  Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions , 2011 .

[11]  Alexander Pergament,et al.  Electrical switching and Mott transition in VO2 , 2000 .

[12]  T. M. Rice,et al.  Metal‐Insulator Transitions , 2003 .

[13]  Stuart S. P. Parkin,et al.  Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy , 2013, Nature Physics.

[14]  A. Crunteanu,et al.  Microwave Power Limiting Devices Based on the Semiconductor–Metal Transition in Vanadium–Dioxide Thin Films , 2010, IEEE Transactions on Microwave Theory and Techniques.

[15]  A. Crunteanu,et al.  Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis , 2010, Science and technology of advanced materials.

[16]  Aurelian Crunteanu,et al.  Structural, electrical and optical properties of thermochromic VO2 thin films obtained by reactive electron beam evaporation , 2012 .

[17]  Byung-Gyu Chae,et al.  Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging , 2007, Science.

[18]  Federico Capasso,et al.  Vanadium Dioxide as a Natural Disordered Metamaterial: Perfect Thermal Emission and Large Broadband Negative Differential Thermal Emittance , 2013 .

[19]  A. Cavalleri,et al.  Femtosecond Structural Dynamics in VO2 during an Ultrafast Solid-Solid Phase Transition. , 2001, Physical review letters.

[20]  Kunio Okimura,et al.  Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO2 films with metal–insulator transition , 2008 .

[21]  Jean-Christophe Orlianges,et al.  Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO2 layers integrated in crossbars geometry , 2014 .

[22]  Evgheni Strelcov,et al.  Gas sensor based on metal-insulator transition in VO2 nanowire thermistor. , 2009, Nano letters.

[23]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[24]  Gyungock Kim,et al.  Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices , 2004 .