Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variation
暂无分享,去创建一个
Aurelian Crunteanu | Jean-Christophe Orlianges | Marc Fabert | Annie Bessaudou | Françoise Cosset | Maggy Colas | Julie Cornette
[1] Shriram Ramanathan,et al. Structure-functional property relationships in rf-sputtered vanadium dioxide thin films , 2007 .
[2] Xin Zhang,et al. Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial , 2012, Nature.
[3] C. N. Berglund,et al. Electronic Properties of V O 2 near the Semiconductor-Metal Transition , 1969 .
[4] O. Durand,et al. Structural, electrical and optical properties of pulsed laser deposited VO2 thin films on R- and C-sapphire planes , 2004 .
[5] Federico Capasso,et al. Ultra-thin perfect absorber employing a tunable phase change material , 2012 .
[6] A. Crunteanu,et al. High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes , 2012 .
[7] R. Mark Wilson,et al. Metal–insulator transition in vanadium dioxide , 2009 .
[8] Allen,et al. VO2: Peierls or Mott-Hubbard? A view from band theory. , 1994, Physical review letters.
[9] F. J. Morin,et al. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature , 1959 .
[10] S. Ramanathan,et al. Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions , 2011 .
[11] Alexander Pergament,et al. Electrical switching and Mott transition in VO2 , 2000 .
[12] T. M. Rice,et al. Metal‐Insulator Transitions , 2003 .
[13] Stuart S. P. Parkin,et al. Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy , 2013, Nature Physics.
[14] A. Crunteanu,et al. Microwave Power Limiting Devices Based on the Semiconductor–Metal Transition in Vanadium–Dioxide Thin Films , 2010, IEEE Transactions on Microwave Theory and Techniques.
[15] A. Crunteanu,et al. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis , 2010, Science and technology of advanced materials.
[16] Aurelian Crunteanu,et al. Structural, electrical and optical properties of thermochromic VO2 thin films obtained by reactive electron beam evaporation , 2012 .
[17] Byung-Gyu Chae,et al. Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging , 2007, Science.
[18] Federico Capasso,et al. Vanadium Dioxide as a Natural Disordered Metamaterial: Perfect Thermal Emission and Large Broadband Negative Differential Thermal Emittance , 2013 .
[19] A. Cavalleri,et al. Femtosecond Structural Dynamics in VO2 during an Ultrafast Solid-Solid Phase Transition. , 2001, Physical review letters.
[20] Kunio Okimura,et al. Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO2 films with metal–insulator transition , 2008 .
[21] Jean-Christophe Orlianges,et al. Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO2 layers integrated in crossbars geometry , 2014 .
[22] Evgheni Strelcov,et al. Gas sensor based on metal-insulator transition in VO2 nanowire thermistor. , 2009, Nano letters.
[23] Wei Yang Lu,et al. Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.
[24] Gyungock Kim,et al. Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices , 2004 .