Many-valley electron transport in AlGaAs VCSELs

Carrier transport in GaAs-based vertical-cavity surface-emitting lasers (VCSELs) is investigated by means of an in-house multiphysics code, with particular emphasis on the description of many-valley effects in the conduction band of AlGaAs barriers. These effects, which are revealed to have a significant impact on the overall VCSEL performance, are accounted for by an effective density of states obtained with a closed-form model. This description has been included in a simplified simulation framework, where most of the distributed Bragg reflector pairs are replaced by an equivalent homogeneous layer. This leads to a major reduction of the computational cost, especially important in view of the computer-aided design of 3D devices.

[1]  K. Iga,et al.  GaInAsP/InP Surface Emitting Injection Lasers , 1979 .

[2]  B. Tell,et al.  High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers , 1990 .

[3]  Michele Goano,et al.  Series expansion of the Fermi-Dirac integral Fj(x) over the entire domain of real j and x , 1993 .

[4]  K. Choquette,et al.  Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy , 1994, IEEE Photonics Technology Letters.

[5]  S. Selberherr.  Analysis and simulation of semiconductor devices , 1984 .

[6]  M. Goano,et al.  Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D , 2015 .

[7]  K. Killeen,et al.  Low resistance wavelength-reproducible p-type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy , 1993 .

[8]  L. Coldren,et al.  Low threshold planarized vertical-cavity surface-emitting lasers , 1990, IEEE Photonics Technology Letters.

[9]  J. P. Harbison,et al.  Low threshold electrically pumped vertical cavity surface emitting microlasers , 1989, Annual Meeting Optical Society of America.

[10]  Wolfgang Fichtner,et al.  A comprehensive VCSEL device simulator , 2003 .

[11]  R. Michalzik.  VCSELs: Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers , 2012 .

[12]  H. Casey,et al.  Heterostructure lasers. Part A. Fundamental principles , 1978 .

[13]  S. Adachi.  GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .

[14]  B. Tell,et al.  Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 mu m , 1990 .

[15]  Giovanni Ghione,et al.  Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues , 2014 .

[16]  Lin-wang Wang,et al.  Magnitude and Size Scaling of Intervalley Coupling in Semiconductor Alloys and Superlattices , 1997 .

[17]  Kiselev,et al.  Absorption coefficient in type-II GaAs/AlAs short-period superlattices. , 1994, Physical review. B, Condensed matter.

[18]  Mark R. Pinto,et al.  Elimination of heterojunction band discontinuities by modulation doping , 1992 .

[19]  Analytical Electromagnetic Solution for Bragg Mirrors With Graded Interfaces and Guidelines for Enhanced Reflectivity , 2007, IEEE Journal of Quantum Electronics.

[20]  Yeong-Her Wang,et al.  Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers , 1990 .

[21]  M. Nakayama,et al.  Γ-X mixing effects on photoluminescence intensity in GaAs/AlAs type-II superlattices , 1993 .

[22]  R. Michalzik,et al.  Modeling and design of proton-implanted ultralow-threshold vertical-cavity laser diodes , 1993 .

[23]  Gao-xiang Li,et al.  High pressure study of Γ-X mixing in InAs/GaAs quantum dots , 1995 .

[24]  Renato Orta,et al.  High-Contrast Gratings Performance Issues in Tunable VCSELs , 2015, IEEE Journal of Quantum Electronics.

[25]  L. Coldren,et al.  InGaAs vertical-cavity surface-emitting lasers , 1991 .

[26]  M. Willander,et al.  Valley mixing effects on electron tunneling transmission in GaAs/AlAs heterostructures , 1994 .

[27]  Michele Goano,et al.  Algorithm 745: computation of the complete and incomplete Fermi-Dirac integral , 1995, TOMS.

[28]  F. Rinaldi,et al.  Surface Relief Versus Standard VCSELs: A Comparison Between Experimental and Hot-Cavity Model Results , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[29]  Yanzhao Lu,et al.  Theory of electronic structure in superlattices , 1989 .

[30]  A. Vahanyan,et al.  Possibility of experimental determination of band structure parameters in many-valley semiconductors , 2014 .

[31]  Million-Atom Pseudopotential Calculation of Gamma-X Mixing in GaAs/AlAs Superlattices and Quantum Dots , 1997 .

[32]  D. M. Kuchta,et al.  Vertical‐cavity surface‐emitting laser diodes fabricated by phase‐locked epitaxy , 1991 .

[33]  R. E. Hayes,et al.  Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics , 1998 .

[34]  K. Ebeling,et al.  Potential barriers and current‐voltage characteristics of p‐doped graded AlAs‐GaAs heterojunctions , 1992 .

[35]  N. Dutta,et al.  Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors , 1991 .

[36]  Syassen,et al.  Electronic structure of GaAs/AlAs symmetric superlattices: A high-pressure study near the type-I-type-II crossover. , 1990, Physical review. B, Condensed matter.

[37]  G. A. Vawter,et al.  Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD , 1991, IEEE Photonics Technology Letters.