Parameter-dependent third-order nonlinear susceptibility of parabolic InGaN/GaN quantum dots

The electron states confined in wurtzite In"xGa"1"-"xN/GaN-strained quantum dots (QDs) have been investigated in the effective-mass approximation by solving the Schrodinger equation, in which parabolic confined potential and strong built-in electric field effect due to the piezoelectricity and spontaneous polarization have been taken into account. The third-order nonlinear susceptibility of the QDs in various directions (both parallel to z direction and vertical to z direction) have been calculated, and the magnitude reaches 10^-^1^4m^2/V^2. It has been shown from the results that the order of the built-in electric field in the strained QD is of MV/cm. Furthermore, the results of how the third-order nonlinear susceptibility depend on the radius R of QDs, the height L of QDs, the In content x of QDs and the relaxation rate @C"1"0 have been given.

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