论文信息 - Amorphous Si∕Au wafer bonding

Amorphous Si∕Au wafer bonding

The authors report a rapid reaction between Au and amorphous Si (a-Si), which occurred at a much faster rate compared to the case of crystal Si∕Au reaction. With an amorphous Si coating layer on crystal Si (c-Si) wafer, air voids and craters were prevented from forming at the Si∕Au bonding interface, but were usually found at the crystal Si∕Au bonding interface. The uniform liquid eutectic Au–Si alloy quickly formed at the Au/amorphous Si bonding interface is the key for the prevention of air voids and craters. This amorphous Si∕Au bonding process enables the feasibility of eutectic Au∕Si bonding for wafer bonding applications.

Che-Chu Lin | Pin-Jen Chen | C. Y. Liu

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