MOSFET MODELING AND PARAMETER EXTRACTION FOR RF IC'S

After reviewing the basic concept and general strategies, we have examined a variety of examples of modeling and parameter extraction methods for RF MOSFET's. Modeling and parameter extraction techniques popular in III-V FET modeling were reviewed and recent efforts to model the RF MOSFET and extract the model parameters were examined in light of the differences between the MOSFET and the III-V FET. A very simple and accurate parameter extraction method studied in our laboratory for three-terminal modeling considering charge conservation is also introduced. Our works have two important implications. One is that the consideration for charge conservation is important not only for accurate device modeling and circuit simulation but even more for proper parameter extraction. Another is that one accurate large-signal I-V model is enough to be used for DC, low-frequency analog, as well as RF circuit simulation. Four-terminal modeling based on new equivalent circuits to address the high-frequency effects arising in a MOSFET is very complicated and not practical for CAD applications, even without considering the substrate coupling terms. As a temporary alternative, the macro-modeling approach is examined with various examples.