Optical properties of ZnO and MgZnO nanocrystals below and at the phase separation range
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M. Grant Norton | Leah Bergman | Jesse Huso | Heather Hoeck | M. G. Norton | John L. Morrison | J. Huso | L. Bergman | J. Morrison | H. Hoeck | James Mitchell | Erin Casey | J. Mitchell | Erin Casey
[1] Nancy C. Giles,et al. Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy , 2003 .
[2] T. Zheleva,et al. Ultraviolet-Photoluminescence and Raman Properties of MgxZn1-xO Nanopowders^* , 2006 .
[3] T. Venkatesan,et al. Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films , 2002 .
[4] E. F. Schubert,et al. Doping in III-V Semiconductors , 1993 .
[5] E. W. Williams,et al. Chapter 4 Photoluminescence I: Theory , 1972 .
[6] H. Morkoç,et al. A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .
[7] H. Koinuma,et al. Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers , 2002 .
[8] H. Queisser,et al. Alloy broadening in photoluminescence spectra ofAlxGa1−xAs , 1984 .
[9] W. C. Walker,et al. Spin-Orbit Splitting of the Γ Exciton in MgO , 1966 .
[10] Stergios Logothetidis,et al. Temperature dependence of the dielectric function of germanium , 1984 .
[11] H. Koinuma,et al. Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy , 2002 .
[12] M. Grundmann,et al. MgxZn1−xO(0⩽x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition , 2005 .
[13] Hongxing Jiang,et al. Linewidths of excitonic luminescence transitions in AlGaN alloys , 2001 .
[14] D. Look,et al. Study of the Photoluminescence of Phosphorus-Doped p-Type ZnO Thin Films Grown by Radio-Frequency Magnetron Sputtering , 2005 .
[15] Akira Ohtomo,et al. MgxZn1−xO as a II–VI widegap semiconductor alloy , 1998 .
[16] K. Thonke,et al. Au-catalyzed growth processes and luminescence properties of ZnO nanopillars on Si , 2006 .
[17] Martin Feneberg,et al. Stacking fault related 3.31-eV luminescence at 130-meV acceptors in zinc oxide , 2008 .
[18] T. S. Lee,et al. Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition , 2003 .
[19] Hsin-Ming Cheng,et al. Band gap engineering and stimulated emission of ZnMgO nanowires , 2006 .
[20] P. Bhattacharya,et al. Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films , 2003 .
[21] J. Huso,et al. The properties of ZnO photoluminescence at and above room temperature , 2007 .
[22] Jürgen Christen,et al. Bound exciton and donor–acceptor pair recombinations in ZnO , 2004 .
[23] W. C. Walker,et al. Exciton thermoreflectance of MgO and CaO , 1973 .
[24] Haihua Liu,et al. Transmission electron microscopy investigation of self-assembly ZnO twinning nanostructures , 2006 .
[25] M. G. Norton,et al. Low temperature LO-phonon dynamics of MgZnO nanoalloys , 2007 .
[26] Yujia Zeng,et al. ZnMgO quantum dots grown by low-pressure metal organic chemical vapor deposition , 2007 .
[27] E. Segnit,et al. The System MgO‐ZnO‐SiO2 , 1965 .
[28] John F. Muth,et al. Optical and Structural Properties of Epitaxial MgxZn1-xO Alloys , 1999 .