Carrier mobility characteristics and negative bias temperature instability reliability in strained-Si p-type metal-oxide-semiconductor field-effect transistors

Surface-channel p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) processed on the strained-Si/relaxed-SiGe substrate feature significantly enhanced hole mobility (45%) compared to the unstrained-Si control device. Analysis of the mobility characteristics shows that surface roughness scattering for strained-Si pMOSFETs begins to dominate at a relatively low effective field (∼0.1 MV/cm) and thus limits the drive current enhancement. In addition, experimental data indicate that negative bias temperature instability is a potential reliability concern for strained-Si pMOSFETs.

[1]  C. Maiti,et al.  Ultrathin oxides using N2O on strained Si1−xGex layers , 1996 .

[2]  A. O'Neill,et al.  Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors , 2005 .

[3]  D. Schroder,et al.  Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing , 2003 .

[4]  H. D. Banerjee,et al.  Interface properties and reliability of ultrathin oxynitride films grown on strained Si1−xGex substrates , 2003 .

[5]  M. Lundstrom.  On the mobility versus drain current relation for a nanoscale MOSFET , 2001, IEEE Electron Device Letters.

[6]  R. Chau,et al.  A 90-nm logic technology featuring strained-silicon , 2004, IEEE Transactions on Electron Devices.

[7]  Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric , 2005 .

[8]  S. Takagi,et al.  On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .

[9]  Horng-Chih Lin,et al.  Impacts of uniaxial compressive strain on dynamic negative bias temperature instability of p-channel MOSFETs , 2006 .

[10]  J. Welser,et al.  Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors , 1996 .

[11]  P. Solomon,et al.  Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness , 2003 .

[12]  Terence B. Hook,et al.  The effects of fluorine on parametrics and reliability in a 0.18-/spl mu/m 3.5/6.8 nm dual gate oxide CMOS technology , 2001 .