Fracture friendly optical proximity correction for non-Manhattan features

Optical Proximity Correction improves wafer image fidelity by combining small correction shapes with the original pattern data. Although these small shapes improve the exposure of the wafer image, the increase in total figure count results in longer fracture processing and E-beam writing time to create the mask. In this paper we describe alternative OPC treatment for jogs on non-Manhattan features, which reduce the additional figures produced, and make the data friendlier to the fracture and mask fabrication phases. Illustrations of example pattern data and improvement results in terms of figure counts are described.