Electrical-field driven tunable spectral responses in a broadband-absorbing perovskite photodiode.

Controllably manipulating the spectral response of broadband-absorbing semiconductors is crucial in developing wavelength-selective optoelectronic devices. In this article, we report for the first time bias-dependent spectral responses for a metal-halide perovskite photodiode. Tunable external quantum efficiencies in the short-, long-wavelength regime as well as the full spectral range (ca. 300-800 nm) are observed when the device is operated under short-circuit, forward and reverse bias conditions, respectively. This observation is understood by the interplay of wavelength-dependent penetration depth and barrier formation within the photodiode device stack. The general applicability of this concept is confirmed by a systematic study on a series of mixed-halide perovskite devices. These results suggest the proposed concept allows as a promising platform, and should inspire further exploration of multi-spectral responsive optoelectronic devices.

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