Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the multiple quantum well heterojunction bipolar transistor laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of ≈60 GHz is achieved in the case of 5 quantum wells each of 70 A widths and a cavity length of 200 μm.

[1]  Lukas Chrostowski,et al.  Small-signal modeling of the transistor laser including the quantum capture and escape lifetimes , 2008 .

[2]  J. Leburton,et al.  Modeling of the Transient Characteristics of Heterojunction Bipolar Transistor Lasers , 2009, IEEE Journal of Quantum Electronics.

[3]  Milton Feng,et al.  Charge control analysis of transistor laser operation , 2007 .

[4]  Dan Botez,et al.  Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers , 1999 .

[5]  Milton Feng,et al.  Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser , 2006 .

[6]  Scott W. Corzine,et al.  Effects of carrier transport on high‐speed quantum well lasers , 1991 .

[7]  K. Köhler,et al.  Auger recombination in intrinsic GaAs , 1993 .

[8]  S. Hausser,et al.  Auger recombination in bulk and quantum well InGaAs , 1990 .

[9]  Niloy K. Dutta,et al.  Long wavelength semiconductor lasers , 1988, Technical Digest., International Electron Devices Meeting.

[10]  Milton Feng,et al.  Laser operation of a heterojunction bipolar light-emitting transistor , 2004 .

[11]  T. Detemple,et al.  On the semiconductor laser logarithmic gain-current density relation , 1993 .

[12]  E. Hairer,et al.  Solving Ordinary Differential Equations II: Stiff and Differential-Algebraic Problems , 2010 .

[13]  James J. Coleman,et al.  Threshold current density in strained layer In/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasers , 1992 .

[14]  Nobuhiko Nishiyama,et al.  Large-Signal Analysis of a Transistor Laser , 2011, IEEE Journal of Quantum Electronics.

[15]  Michael R. Melloch,et al.  The effects of heavy impurity doping on AlGaAs/GaAs bipolar transistors , 1989 .

[16]  Wei Shi,et al.  Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser , 2011, 1102.3196.

[17]  Dalma Novak,et al.  A time-domain model for high-speed quantum-well lasers including carrier transport effects , 1995 .

[18]  J. Leburton,et al.  Performance Optimization of Multiple Quantum Well Transistor Laser , 2013, IEEE Journal of Quantum Electronics.

[19]  D. Scifres,et al.  Optical analysis of multiple-quantum-well lasers. , 1979, Applied optics.

[20]  H. Kaatuzian,et al.  Gain-bandwidth trade-off in a transistor laser: quantum well dislocation effect , 2009 .

[21]  Masayuki Ishikawa,et al.  High speed quantum-well lasers and carrier transport effects , 1992 .