Consistency of the double exponential model with physical mechanisms of conduction for a solar cell under illumination
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[1] William Shockley,et al. The theory of p-n junctions in semiconductors and p-n junction transistors , 1949, Bell Syst. Tech. J..
[2] I. M. Ross,et al. The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity , 1956, Proceedings of the IRE.
[3] C. Sah,et al. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.
[4] M. Wolf,et al. SERIES RESISTANCE EFFECTS ON SOLAR CELL MEASUREMENTS , 1963 .
[5] E. A. Faulkner,et al. Modified theory of the current/voltage relation in silicon p--n junctions , 1968 .
[6] A. Nussbaum. Generation-recombination characteristic behavior of silicon diodes , 1973 .
[7] M. Wolf,et al. Investigation of the double exponential in the current—Voltage characteristics of silicon solar cells , 1977, IEEE Transactions on Electron Devices.
[8] Charles Howard Henry,et al. The effect of surface recombination on current in AlxGa1−xAs heterojunctions , 1978 .
[9] Sheng S. Li,et al. The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon , 1978 .
[10] E. L. Burgess,et al. Application of the superposition principle to solar-cell analysis , 1979, IEEE Transactions on Electron Devices.
[11] R. N. Hall,et al. Silicon photovoltaic cells , 1981 .
[12] P. Mialhe,et al. A practical method of analysis of the current-voltage characteristics of solar cells , 1981 .
[13] G. Araújo,et al. Determination of the two-exponential solar cell equation parameters from empirical data , 1982 .
[14] J.-P. Charles,et al. Etude comparative des modèles à une et deux exponentielles en vue d'une simulation précise des photopiles , 1984 .
[15] N. Pearsall,et al. Meyer–Neldel rule in solar cells , 1984 .