Chapter 7 - Applications of Quantum Dot to Optical Devices

This chapter deals with the problems related to conventional technologies and discusses the direct modulation of quantum-dot lasers and the feasibility of an external modulator using quantum dots. The chapter discusses the use of quantum dots (1) as a nonlinear medium and (2) for high-density optical memories using persistent spectral hole burning. It also summarizes the roles of quantum-dot-based devices in the future of optoelectronics. The optical interconnection between boards and chips, and within chips, is becoming a research target. Other than communication and data transmission, optical data storage and optical image processing are also important research areas. Two approaches are being taken to achieve larger-capacity transmission: (1) wavelength division multiplexing (WDM) system and (2) higher data rate time-division multiplexing (TDM) system. Access networks systems—such as fiber to the home (FTTH) and fiber to the curb (FTTC)—require low power consuming lasers that provide temperature-robust performance.

[1]  Yokoyama,et al.  Intrasubband scattering in highly excited semiconductor quantum wells with biaxial strain. , 1994, Physical review. B, Condensed matter.

[2]  Hiroyuki Nakano,et al.  High-speed and ultralow-chirp 11.55 mu m multiquantum well lambda /4-shifted DFB lasers , 1991 .

[3]  H. Ishikawa,et al.  Large estimated frequency response increase from deep potential well strained quantum well lasers , 1994, IEEE Photonics Technology Letters.

[4]  Masayuki Ishikawa,et al.  High speed quantum-well lasers and carrier transport effects , 1992 .

[5]  Mikhail V. Maximov,et al.  Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .

[6]  Kerry J. Vahala,et al.  Terahertz four‐wave mixing spectroscopy for study of ultrafast dynamics in a semiconductor optical amplifier , 1993 .

[7]  G. Bastard,et al.  Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases. , 1990, Physical review. B, Condensed matter.

[8]  T. Koch,et al.  Effect of nonlinear gain reduction on semiconductor laser wavelength chirping , 1986 .

[9]  M. Mukunda Rao.  Optical Communication , 2000 .

[10]  Akira Takemoto,et al.  Extremely narrow spectral linewidth and low chirping of the MQW-DFB-PPIBH laser diode , 1990 .

[11]  C. Henry.  Theory of the linewidth of semiconductor lasers , 1982 .

[12]  Sugawara,et al.  Phonon bottleneck in self-formed InxGa1-xAs/GaAs quantum dots by electroluminescence and time-resolved photoluminescence. , 1996, Physical review. B, Condensed matter.

[13]  Alexander V. Uskov,et al.  Auger carrier capture kinetics in self-assembled quantum dot structures , 1998 .

[14]  Hiroshi Ishikawa,et al.  THz frequency conversion using nondegenerate four-wave mixing process in a lasing long-cavity λ/4-shifted DFB laser , 1995 .

[15]  F. Huet,et al.  High-speed InGaAsP/InGaAsP MQW electroabsorption modulator with high optical power handling capacity , 1992 .

[16]  Rodney S. Tucker,et al.  High-speed modulation of semiconductor lasers , 1985 .

[17]  Hiroshi Ishikawa,et al.  Nondegenerate four-wave mixing in a long-cavity /spl lambda//4-shifted DFB laser using its lasing beam as pump beams , 1997 .

[18]  Richard A. Soref,et al.  Carrier-induced change in refractive index of InP, GaAs and InGaAsP , 1990 .

[19]  M. Rosen,et al.  Breaking the phonon bottleneck in nanometer quantum dots: Role of Auger-like processes , 1995 .

[20]  Rodney S. Tucker,et al.  Picosecond measurement of chirp in gain-switched, single-mode injection lasers , 1987 .

[21]  Mitsuru Sugawara,et al.  Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique , 1996 .

[22]  E. Kane,et al.  Band structure of indium antimonide , 1957 .

[23]  Hajime Shoji,et al.  Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck , 1996 .

[24]  Sadao Adachi,et al.  Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design , 1982 .

[25]  Shunichi Muto,et al.  On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes , 1995 .

[26]  Niloy K. Dutta,et al.  Linewidth enhancement factor in InGaAsP/InP multiple quantum well lasers , 1987 .

[27]  R. Olshansky,et al.  Frequency response of 1.3µm InGaAsP high speed semiconductor lasers , 1987 .

[28]  Naoto Horiguchi,et al.  Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in PIN diode , 1997 .

[29]  Hiroshi Ishikawa,et al.  Chirp behaviour of high-speed GaInAsP/InP optical intensity modulator , 1988 .

[30]  Kazuo Hagimoto,et al.  20 Gbit/s transmission experiments using an integrated MQW modulator/DFB laser module , 1994 .

[31]  K. Sato,et al.  Penalty-free 10 Gb/s NRZ transmission over 100 km of standard fiber at 1.55 μm with a blue-chirp modulator integrated DFB laser , 1996, IEEE Photonics Technology Letters.

[32]  Hiroshi Ishikawa,et al.  Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer , 1996 .

[33]  Victor Ryzhii,et al.  The theory of quantum-dot infrared phototransistors , 1996 .

[34]  Alexander V. Uskov,et al.  Auger carrier relaxation in self-assembled quantum dots by collisions with two-dimensional carriers , 1997 .

[35]  Lindberg,et al.  Theory of optically excited intrinsic semiconductor quantum dots. , 1990, Physical review. B, Condensed matter.

[36]  M. DiDomenico,et al.  Effects of Plasma Screening and Auger Recombination on the Luminescent Efficiency in GaP , 1970 .

[37]  T. Chikama,et al.  Compensation of chromatic dispersion in a single-mode fiber by optical phase conjugation , 1993, IEEE Photonics Technology Letters.

[38]  M. Matsuda,et al.  Proposal for quantum-dot electroabsorption modulator , 1996, IEEE Photonics Technology Letters.

[39]  Kenichi Iga,et al.  Frequency chirping of external modulation and its reduction , 1985 .

[40]  Yoshiaki Nakata,et al.  Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy , 1997 .

[41]  Haruhiko Kuwatsuka,et al.  Polarisation-insensitive wavelength conversion and phase conjugation using bi-directional forward four-wave mixing in a lasing DFB-LD , 1997 .

[42]  Bockelmann.  Exciton relaxation and radiative recombination in semiconductor quantum dots. , 1993, Physical review. B, Condensed matter.

[43]  John E. Bowers,et al.  High-speed InGaAsP constricted-mesa lasers , 1986 .

[44]  Park,et al.  Room-temperature optical nonlinearities in GaAs. , 1986, Physical review letters.

[45]  Hajime Shoji,et al.  Self-organized quantum dots and quantum dot lasers (invited) , 1998 .

[46]  D. Haarer,et al.  Future Trends In Frequency-seiective Optical Memories , 1993 .

[47]  Hiroshi Ishikawa,et al.  Distributed feedback laser emitting at 1.3 µm for gigabit communication systems , 1987 .

[48]  Yoshiaki Nakata,et al.  New Optical Memory Structure Using Self-Assembled InAs Quantum Dots , 1995 .