Small-signal analysis of the gate-controlled diode

Abstract This paper describes the small signal behavior of MOS gate-controlled diodes. An expression for the capacitance of this device is developed from basic device physics equations. Computer calculations are compared with measured data and the model is seen to predict both the frequency and voltage dependence of the capacitance. The development of this model was made possible through the careful decomposition of teh basic MOS equations into time dependent and static parts.