Offset reduction of Hall plates in three different crystal planes

Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by mechanical stress in the device. The offset can be reduced with a factor 1000 to 100000 when the spinning-current principle is applied. This paper presents a model for the influence of mechanical stress in (spinning)-current Hall plates, realized in different crystal planes. Measurements show that the offset of silicon Hall plates in (100), [110] and (111) planes is reduced to a few microtesla, independent of the amplitude of the original offset.