Near-field photocurrent imaging of the optical mode profiles of semiconductor laser diodes

The potential of near-field photocurrent spectroscopy for direct imaging of mode profiles of submicron-sized waveguides in optoelectronic devices is demonstrated. The technique combines the submicron spatial resolution of near-field optics with tunable laser excitation, allowing for selective investigation of the waveguide properties of the device structure. Experiments on InGaAs/AlGaAs high-power laser diodes with different waveguide designs provide direct visualization of the effect of the waveguide design on (i) the number of guided modes and (ii) the spatial profile of both fundamental and higher-order modes. The technique thus provides a sensitive tool for nondestructive in situ analysis of waveguide properties in optoelectronic devices.

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