论文信息 - Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets - 字舞流文

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

H. Ryssel | A. Bauer | F. Cristiano | A. Burenkov | V. Mortet | M. Krieger | C. Strenger | E. Bedel-Pereira | V. Uhnevionak