论文信息 - Analysis of multiple cell upsets due to neutrons in SRAMs for a Deep-N-well process

Analysis of multiple cell upsets due to neutrons in SRAMs for a Deep-N-well process

This work accounts for the single-bit and multiple-cell upset phenomena due to neutron strikes in highly scaled SRAMs implemented in a Deep-N-well process. 3D TCAD simulations are used to explain test results, upset mechanisms and implications for ECC.

Bharat Bhuva | Nihaar Mahatme | Y-P Fang | Anthony Oates

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