Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation

Large, unexpected shifts in the current-voltage (IV) characteristics of commercial power MOSFETs irradiated with heavy ions have been observed. The shifts can be more than sixty-five times larger than the shifts resulting from total dose irradiation with gamma rays or electrons, and are shown to strongly depend on both the irradiation bias and the ion linear energy transfer (LET). These large shifts are a significant concern for devices intended to operate in low power space applications because it is shown that they can lead to off-state leakage currents greater than 1 A. The data are consistent with the formation of parasitic transistors resulting from the microdose deposited in the gate oxides of these devices by the heavy ions. These results have significant implications for hardness assurance testing of MOS devices for use in space.

[1]  Robert Ecoffet,et al.  Heavy ion induced single hard errors on submicronic memories (for space application) , 1992 .

[2]  Kenneth F. Galloway,et al.  SEGR and SEB in n-channel power MOSFETs , 1996 .

[3]  T. R. Oldham,et al.  Ionization of SiO2 by Heavy Charged Particles , 1981, IEEE Transactions on Nuclear Science.

[4]  E. G. Stassinopoulos,et al.  The space radiation environment for electronics , 1988, Proc. IEEE.

[5]  The surface generation hump in irradiated power MOSFETs , 1994 .

[6]  Marty R. Shaneyfelt,et al.  Use of COTS microelectronics in radiation environments , 1999 .

[7]  Daniel M. Fleetwood,et al.  Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides , 2000 .

[8]  Z.J. Shen,et al.  Lateral power MOSFET for megahertz-frequency, high-density DC/DC converters , 2006, IEEE Transactions on Power Electronics.

[9]  C. R. Wie,et al.  Study of radiation effects in /spl gamma/-ray irradiated power VDMOSFET by DCIV technique , 2001 .

[10]  P. Garnier,et al.  Total dose failures in advanced electronics from single ions , 1993 .

[11]  Determining the drain doping in DMOS transistors using the hump in the leakage current , 1994 .

[12]  Richard K. Williams,et al.  A 30-V P-channel trench gated DMOSFET with 900 /spl mu//spl Omega/-cm/sup 2/ specific on-resistance at 2.7 V , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[14]  J.A. Felix,et al.  Radiation-induced off-state leakage current in commercial power MOSFETs , 2005, IEEE Transactions on Nuclear Science.

[15]  T. A. Hill,et al.  Identification of radiation-induced parasitic leakage paths using light emission microscopy , 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

[16]  P.E. Dodd,et al.  Physics-based simulation of single-event effects , 2005, IEEE Transactions on Device and Materials Reliability.

[17]  Daniel M. Fleetwood,et al.  Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices , 1991 .

[18]  Marty R. Shaneyfelt,et al.  Comparison of charge yield in MOS devices for different radiation sources , 2002 .

[19]  Marty R. Shaneyfelt,et al.  Optimum laboratory radiation source for hardness assurance testing , 2001 .

[20]  R. Chitty,et al.  On the suitability of non-hardened high density SRAMs for space applications , 1991 .

[21]  T. A. Hill,et al.  Identification of radiation-induced parasitic leakage paths using light emission microscopy , 2003, IEEE Transactions on Nuclear Science.

[22]  O. Flament,et al.  Total dose hardness assurance testing using laboratory radiation sources , 2003 .

[23]  R. L. Pease,et al.  Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs , 1996 .