论文信息 - Weak localization in indium nitride films

Weak localization in indium nitride films

We have studied the weak localization (WL) effects in the electron accumulation layer on InN surface. Both the spin-orbit relaxation time τso and the electron-phonon scattering time τe-ph have been extracted from the WL analysis. We have observed that 1/τso increase with disorder and τe-ph exhibits a tendency to change gradually from the characteristic dependence 1/τe-ph ∝ T3 in the pure case to the form of T2l-1 with increasing disorder.

X. Z. Yu | Z. Z. Jiang | Y. Yang | W. Pan | W. Z. Shen

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