High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors
暂无分享,去创建一个
Hadis Morkoç | Xianfeng Ni | Ümit Özgür | Jacob H. Leach | Jinqiao Xie | H. Morkoç | Ü. Özgür | J. Leach | X. Ni | M. Wu | Jinqiao Xie | Mo Wu
[1] Eric Feltin,et al. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures , 2006 .
[2] Takashi Jimbo,et al. Characterization of different-Al-content AlxGa1−xN/GaN heterostructures and high-electron-mobility transistors on sapphire , 2003 .
[3] Hadis Morko,et al. Handbook of Nitride Semiconductors and Devices , 2008 .
[4] James S. Speck,et al. Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers , 2000 .
[5] M. Spencer,et al. On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface , 2005 .
[6] High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy , 2006 .
[7] Hywel Morgan,et al. Dielectric spectroscopy of single cells: time domain analysis using Maxwell's mixture equation , 2007 .
[8] Jürgen Christen,et al. Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range , 2007 .
[9] Ho Won Jang,et al. Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructures , 2002 .
[10] Debdeep Jena,et al. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions , 2007 .
[11] J. Kuzmik,et al. Power electronics on InAlN/(In)GaN: Prospect for a record performance , 2001, IEEE Electron Device Letters.
[12] E. Alves,et al. Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state. , 2006, Physical review letters.
[13] Y.-F. Wu,et al. High Al-content AlGaN/GaN MODFETs for ultrahigh performance , 1998, IEEE Electron Device Letters.
[14] Eric Feltin,et al. Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials , 2005 .
[15] Osamu Oda,et al. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy , 2004 .
[16] James S. Speck,et al. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors , 2000 .
[17] Jan Kuzmik,et al. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal , 2002 .
[19] E. Kohn,et al. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111) , 2004 .