论文信息 - Atomic structure of the NiSi2/(111)Si interface

Atomic structure of the NiSi2/(111)Si interface

Abstract The structure of the NiSi2/(111)Si interface is investigated by the lattice imaging of (110) cross-sectional specimens in a JEOL 200CX transmission electron microscope with 2·4 A point-to-point resolution. NiSi2 is epitaxial and doubly-positioned on (111)Si; lattice images indicate that both silicon-silicide interfaces are atomically abrupt, smooth and well-characterized. It is shown that, although interface images are critically dependent on film thickness and defocus, careful experimental determination of these parameters and comparison with computed images enables atomic models of both interfaces to be derived.

J. Spence | D. Cherns | J. Hutchison | G. Anstis

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