GaAs‐on‐Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high‐performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillators

Improved growth conditions by molecular‐beam epitaxy (MBE) and fabrication of state‐of‐the‐art AlGaAs/GaAs selectively doped heterostructure transistors (SDHTs) and ring oscillators on Si substrates are reported. In MBE growth, use of minimum As4:Ga flux ratio during initial nucleation combined with in situ thermal cycles gave a marked improvement in material quality. With this method, FWHM of x‐ray rocking curves was measured as low as 135 arcsec for a 3.5‐μm‐thick GaAs layer on Si. Although 3‐μm‐thick undoped GaAs buffer layers on p‐type Si substrates were fully depleted under a Schottky contact, a parallel n‐type conduction path confined in a thin region (<0.1 μm) near the GaAs/Si interface was sometimes observed whose sheet density (1012–1013 cm−2) and mobility (600–900 cm2 V−1 s−1) were independent of temperature between 300 and 77 K. This parallel conduction was successfully prevented by doping 0.1 μm GaAs with 5–10×1016 cm−3 Be atoms near the interface. In AlGaAs/GaAs selectively doped heterostruct...

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