Abstract The presence of silicon in rice husk has been established by its chemical and thermal degradation. The bonding between Si and C have been studied by IR spectroscopy. The existence of IR peak at 800 cm 1 shows SiC bonding in raw rice husk, which is shifted to 790 cm 1 during coking and pyrolysis. ESCA study of surface showed Si, C, O and F to be present; Si in the form of SiC x and SiO x and C as SiC x and CH x . On sputtering, the SiO x and CH x species decrease with increase of SiC x level. The formation of SiC from coked rice husk and Si 3 N 4 and Si 2 N 2 O from HCl treated rice husk has been observed at 1200–1400 °C under N 2 and NH 3 atmosphere, respectively. The chemical analysis of raw rice husk and products are tabulated. The XRD analyses shows the presence of different phases in the products. A new mechanism for the development of these ceramic materials has been proposed.
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