Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals

[1]  R. Turan,et al.  Photoluminescence spectra of nitrogen implanted GaSe crystals , 2008 .

[2]  J. Misiewicz,et al.  Built-in electric field and large Stokes shift in near-lattice-matched GaN∕AlInN quantum wells , 2008 .

[3]  S. Gangopadhyay,et al.  A comparative study of second harmonic generation of pulsed CO2 laser radiation in some infrared crystals , 2007 .

[4]  Victor V. Atuchin,et al.  Growth, real structure and applications of GaSe1−xSx crystals , 2006 .

[5]  M. Karabulut,et al.  Exciton photoconductivity in Ge‐doped GaSe crystals , 2005 .

[6]  K. Aoki,et al.  Anomalous PL brightening caused by partial Auger recombination of a (D0, X) complex during an impact ionization avalanche in n-GaAs , 2004 .

[7]  A. O. Kodolbaş,et al.  Exciton photoconductivity in layered semiconductor GaSe , 2004 .

[8]  T. Takagahara.  Quantum Coherence Correlation and Decoherence in Semiconductor Nanostructures , 2003 .

[9]  Z. Gotra,et al.  Formation of heterostructure of A3B6 semiconductor compounds by surface laser modification , 2001 .

[10]  B. Abay,et al.  Urbach-Martienssen's tails in layered semiconductor GaSe , 1999 .

[11]  H. Nakashima,et al.  Characterization of phosphorus in layer semiconductor GaSe , 1998 .

[12]  F. Ohuchi,et al.  Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001) , 1998 .

[13]  A. Gouskov,et al.  Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe , 1982 .

[14]  Kerim R. Allakhverdiev,et al.  Raman scattering from GaSe1−xTex , 1980 .

[15]  Yoshiro Sasaki,et al.  Polytypes and Excitons in GaSe 1-x S x Mixed Crystals , 1980 .

[16]  J. Camassel,et al.  Near-band-edge optical properties of Ga Se x Te 1 − x mixed crystals , 1979 .

[17]  F. Cerdeira,et al.  Splittings and correlations between the long-wavelength optical phonons in the layer compounds GaSe, GaTe, and GaSe 1-x Te x , 1977 .

[18]  L. Gouskov,et al.  Electrical properties of gatexSe1–x crystals , 1977 .

[19]  E. Menêses,et al.  Photoluminescence of layered GaSe1-xTex crystals , 1976 .

[20]  M. Sheinkman,et al.  Determination of the Parameters of Sensitizing Recombination Centres in CdS and CdSe Single Crystals by Temperature and Optical Quenching of Photocurrents , 1965 .