Deep-trench power MOSFET with an Ron Area product of 160 mΩ.mm2

In this paper, is demonstrated the power MOSFET having an Ron Area product of 160 mΩ.mm2(Ron=11 mΩ : BVdss=15 V, Chip area= 3.8 mm × 3.8 mm) which is approximately one third of the lowest value ever reported. A newly developed deep-trench structure has contributed to such the drastic reduction of the product.