Template-based assembling of SiGe∕Si(001) islands by local anodic oxidation
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[1] M. Hanke,et al. Unidirectional self-assembling of SiGe Stranski-Krastanow islands on Si(113) , 2005 .
[2] Pierre M. Petroff,et al. Deterministic Coupling of Single Quantum Dots to Single Nanocavity Modes , 2005, Science.
[3] O. Schmidt,et al. Comment on “A growth pathway for highly ordered quantum dot arrays” [Appl. Phys. Lett. 85, 5974 (2004)] , 2005 .
[4] C. Sow,et al. Spatially resolved diagnosis of stress-induced breakdown in oxide dots by in situ conducting atomic force microscopy , 2005 .
[5] J. Gray,et al. Hierarchical Self-Assembly of Epitaxial Semiconductor Nanostructures , 2004 .
[6] G. Bauer,et al. Structural properties of self-organized semiconductor nanostructures , 2004 .
[7] M. S. Skolnick,et al. SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications , 2004 .
[8] M. Hanke,et al. Equilibrium shape of SiGe Stranski–Krastanow islands on silicon grown by liquid phase epitaxy , 2004 .
[9] H. Raidt,et al. Island chain formation during liquid phase epitaxy of SiGe on silicon , 2003 .
[10] Nikolai N. Ledentsov,et al. Epitaxy of Nanostructures , 2003 .
[11] Dennis W. Prather,et al. Square-lattice photonic crystal microcavities for coupling to single InAs quantum dots , 2003 .
[12] E. Schöll,et al. Formation of island chains in SiGe/Si heteroepitaxy by elastic anisotropy , 2001 .
[13] Christoph Becher,et al. Photonic crystal microcavities with self-assembled InAs quantum dots as active emitters , 2001 .
[14] Eric S. Snow,et al. The kinetics and mechanism of scanned probe oxidation of Si , 2000 .
[15] G. Wagner,et al. The transition from ripples to islands in strained heteroepitaxial growth under low driving forces , 1998 .
[16] Phaedon Avouris,et al. Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication , 1997 .
[17] E. Snow,et al. Fabrication of Si nanostructures with an atomic force microscope , 1994 .