论文信息 - RF Dynamic Behavioral Model Suitable for GaN-HEMT Devices

RF Dynamic Behavioral Model Suitable for GaN-HEMT Devices

This paper presents a new RF dynamic behavioral model based on a neural network (NN) approach suitable for FET devices in a wide range of working classes, and capable to identify the device response, through the training procedure, for a wide range of input power levels. The presented model has been effectively applied to GaN-based devices at 1 GHz, working in class A and B

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