论文信息 - CO2 laser annealing of silicon

CO2 laser annealing of silicon

Boron doped silicon crystals, amorphized by 15N or 121Sb‐ion implantation, were annealed with 100‐ns CO2 laser pulses. 4He‐ion backscattering and channeling spectra, and sychrotron x‐ray topographs of heavily doped (1019...1020 atoms/cm3) samples show an almost complete recrystallization at peak intensities of about 40 MW/cm2, caused at 10.6 μm mainly by free carrier absorption. At intensities of about 20–35 MW/cm2, a rapid increase of the reflectivity to almost 100% at 10.6 μm, and a corresponding decrease in the transmitted intensity was observed. Time resolved transmission and reflection measurements at 10.6 μm and reflection measurements at 0.6.3 μm revealed that a liquid layer was formed at the surface of the crystal. Samples doped with 5×1015 and 3×1016 atoms/cm3 were not fully recrystallized. To estimate the annealing threshold at different doping levels, the maximum surface temperature of the sample was calculated as a function of the laser intensity. The calculations are in agreement with the obs...

E. Rauhala | T. Tuomi | K. Naukkarinen | M. Luomajärvi | M. Blomberg

[1] M. Beguwala,et al. Laser Annealing of Silicon Wafers at 10.6 μm , 1981, March 16.

[2] H. Ryssel,et al. Annealing of boron‐implanted silicon using a CW CO2 Laser , 1981 .

[3] Jerry R. Meyer,et al. Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs , 1980 .

[4] C. W. White,et al. Laser and Electron Beam Processing of Materials , 1980 .

[5] H. Ryssel,et al. CW CO2-laser annealing of arsenic implanted silicon , 1980 .

[6] H. Runge,et al. CO2-LASER ANNEALING OF BURIED LAYERS PRODUCED BY MEV ION IMPLANTATION , 1980 .

[7] K. Ohyu,et al. Annealing of phosphorus‐ion‐implanted silicon using a CO2 laser , 1979 .

[8] H. Leamy,et al. Laser-solid interactions and laser processing, 1978 , 1979 .

[9] Richart E. Slusher,et al. Time‐resolved reflectivity of ion‐implanted silicon during laser annealing , 1978 .

[10] J. Poate,et al. Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation , 1978 .

[11] D. Tetelbaum,et al. Nitrogen as dopant in silicon and germanium , 1976 .

[12] George David Pettit,et al. Structural, Optical, and Electrical Properties of Amorphous Silicon Films , 1970 .

[13] P. A. Schumann,et al. Comparison of classical approximations to free carrier absorption in semiconductors , 1967 .

[14] W. G. Spitzer,et al. Infrared Absorption in n-Type Silicon , 1957 .