Hot-Carrier Degradation During Dynamic Stress

In Chapter 1, the degradation of MOS transistors under DC stress conditions was considered. In a real circuit, however, most of the devices are operated dynamically, on account of which the degradation under AC stress conditions has gained increased attention. The most important question in these studies is whether the AC degradation can or cannot be predicted based on a set of DC degradation measurements. When the prediction based on DC measurements stands true, the AC degradation can be studied as a quasistatic process. When, however, the extrapolation turns out to be invalid, physical insight should be obtained for the deviating behavior.

[1]  W. Weber,et al.  Annealing of fixed oxide charge induced by hot-carrier stressing , 1990, ESSDERC '90: 20th European Solid State Device Research Conference.

[2]  E. Takeda,et al.  An empirical model for device degradation due to hot-carrier injection , 1983, IEEE Electron Device Letters.

[3]  Jeong Yeol Choi,et al.  Simulation of MOSFET lifetime under AC hot-electron stress , 1988 .

[5]  Guido Groeseneken,et al.  Analysis of mechanisms for the enhanced degradation during AC hot carrier stress of MOSFETs , 1988, Technical Digest., International Electron Devices Meeting.

[6]  W. Weber,et al.  Hot-hole and Electron Effects in Dynamically Stressed n-MOSFETs , 1989, ESSDERC '89: 19th European Solid State Device Research Conference.

[7]  D. Schmitt-Landsiedel,et al.  Hot-Carrier Degradation Effects Relevant in Real Operation of MOSFETs , 1990 .

[8]  Kueing-Long Chen,et al.  The case of AC stress in the hot-carrier effect , 1986, IEEE Transactions on Electron Devices.

[9]  R. C. Hughes.  Charge-Carrier Transport Phenomena in Amorphous SiO 2 : Direct Measurement of the Drift Mobility and Lifetime , 1973 .

[10]  W. Weber.  IVB-5 Degradation behavior of dynamically stressed n-MOSFET's , 1985, IEEE Transactions on Electron Devices.

[11]  Q. Wang,et al.  Hot-carrier degradation of CMOS-inverters , 1988, Technical Digest., International Electron Devices Meeting.

[12]  W. Weber,et al.  The effect of transients on hot carriers , 1989, IEEE Electron Device Letters.

[13]  P. Heremans,et al.  Analysis of Hot Carrier Degradation in AC Stressed N-Channel MOS Transistors using the Charge Pumping Technique , 1988, ESSDERC '88: 18th European Solid State Device Research Conference.

[14]  Chenming Hu,et al.  Hot-electron-induced MOSFET degradation—Model, monitor, and improvement , 1985, IEEE Transactions on Electron Devices.

[15]  P. K. Ko,et al.  Hot-Carrier-Induced MOSFET Degradation: AC Versus DC Stressing , 1987, 1987 Symposium on VLSI Technology. Digest of Technical Papers.

[16]  R. Lahri,et al.  Transient substrate current effects on n-channel MOSFET device lifetime , 1988, Technical Digest., International Electron Devices Meeting.

[17]  T. P. Ma,et al.  Ionizing radiation effects in MOS devices and circuits , 1989 .

[18]  K. Seki,et al.  Hot-carrier-induced degradation in p-MOSFETs under AC stress , 1988, IEEE Electron Device Letters.

[19]  C. Werner,et al.  Degradation of n-MOS-Transistors after pulsed stress , 1984, IEEE Electron Device Letters.

[20]  Eiji Takeda,et al.  Hot-Carrier Degradation Mechanism under AC Stress in MOSFET's , 1987, 1987 Symposium on VLSI Technology. Digest of Technical Papers.

[21]  R. C. Hughes.  High field electronic properties of SiO2 , 1978 .

[22]  Hot carrier degradation in n-MOSFETs used as pass transistors , 1990 .

[23]  Chenming Hu,et al.  Hot-carrier-induced MOSFET degradation under AC stress , 1987, IEEE Electron Device Letters.

[24]  K. Mistry,et al.  The role of electron trap creation in enhanced hot-carrier degradation during AC stress (n-channel MOSFET) , 1990, IEEE Electron Device Letters.

[25]  G. Groeseneken,et al.  A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.

[26]  C. Werner,et al.  Lifetimes and substrate currents in static and dynamic hot-carrier degradation , 1986, 1986 International Electron Devices Meeting.

[27]  R. C. Hughes.  Time-resolved hole transport in a-SiO/sub 2/ , 1977 .

[28]  W. Weber,et al.  Sub micron P-MOSFETs under static and swap stress , 1987, 1987 Symposium on VLSI Technology.

[29]  Werner Weber,et al.  Dynamic stress experiments for understanding hot-carrier degradation phenomena , 1988 .

[30]  K. Nakamura,et al.  A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress , 1986, IEEE Electron Device Letters.

[31]  S. Selberherr.  MOS device modeling at 77 K , 1989 .

[32]  D. Schmitt-Landsiedel,et al.  Influence of transistor degradation on CMOS performance and impact on life time criterion , 1988, Technical Digest., International Electron Devices Meeting.

[33]  Guido Groeseneken,et al.  The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETs , 1990 .

[34]  Kazuo Yano,et al.  Hot-Carrier Effects under Pulsed Stress in CMOS Devices , 1987, 1987 Symposium on VLSI Technology. Digest of Technical Papers.